REU/RET Project

Kurt T. Koch
University: University of Missouri Rolla
Mentor in UCF: Dr. R. Vanfleet – AMPAC and Physics

Nano-scale Characterization with HRTEM of Vanadium implanted in Silicon

The question of contamination of Silicon with transition metals during fabrication has led to the further investigation of Silicon implanted with Vanadium. [Peng Zhang , Diffusion Profiles of Chromium and Vanadium Ions Implanted into (100) Single-Crystalline Silicon, Master Thesis, in Dept of Physics at the University of Central Florida, Orlando Florida] Silicon was implanted with Vanadium in doses of 1x1015 atoms/cm2 and 5x1015 atoms/cm2. The Silicon was implanted at 10° off-axis to limit the channeling effects of the 200 KeV Vanadium ions. The Silicon was annealed from 300° C to 1000° C. Samples for cross-sectional TEM techniques were made using tripod polishing and FIB techniques. Observations were made using HRTEM, HAADF and EDX. Crystal regrowth in Silicon was observed after annealing as well as defects and Vanadium precipitates.