REU/RET Project

Jill Adcox
University: University of Florida
Mentor in UCF: Dr. L. Chernyak - Physics

Kinetics of Photoresponse Enhancement and Relaxation in GaN Schottky Barrier Detectors

Applying a short-time (up to 1000 seconds) forward bias a GaN Schottky arrier, fabricated by old evaporation on p-type Mg-doped wafers, leads to a long-term (over 22 hours) increase in the photoresponse. The effect is attributed to charging of Mg-acceptor-related levels in the p-type GaN.